A SYSTEMATIC STUDY OF POSITRON LIFETIMES IN SEMICONDUCTORS

[11] KIRKEGAARD P, 1974, COMPUT PHYS COMMUN, V7, P410

[12] IDENTIFICATION OF DEFECT STATE ASSOCIATED WITH A GALLIUM VACANCY IN GAAS AND ALXGA1-XAS [J]. PHYSICAL REVIEW B, 1977, 15 (10) : 4874 - 4882

[13] POSITRON TRANSMISSION AND SCATTERING MEASUREMENTS USING SUPERPOSITION OF ANNIHILATION LINE SHAPES - BACKSCATTER COEFFICIENTS [J]. PHYSICAL REVIEW A, 1973, 7 (01) : 135 - 145

[14] NIELSEN B, 1976, UNPUB 4TH P INT C PO

[15] LIFETIME SPECTRA OF POSITRONS IN IONIC COMPOUNDS [J]. APPLIED PHYSICS, 1974, 3 (05): : 383 - 385

[16] EFFECT OF DOPING ON POSITRON LIFETIME IN SI CRYSTALS [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1974, 7 (16): : 2776 - 2780

[17] POSITRON-ANNIHILATION IN GERMANIUM [J]. APPLIED PHYSICS, 1975, 5 (04): : 367 - 374

[18] STEIN HJ, 1971, RAD EFFECTS SEMICOND

[19] ASSUMPTION-INDEPENDENT SINGLE-PARTICLE WAVE FUNCTIONS FOR POSITRONS IN SOLIDS - APPLICATIONS TO ANGULAR DISTRIBUTIONS IN AL AND SI [J]. PHYSICAL REVIEW, 1968, 171 (02): : 399 - &

[20] EFFECT OF DOPING ON POSITRON-ANNIHILATION IN GAAS [J]. PHYSICS LETTERS A, 1980, 76 (02) : 157 - 159

[11] KIRKEGAARD P, 1974, COMPUT PHYS COMMUN, V7, P410

[12] IDENTIFICATION OF DEFECT STATE ASSOCIATED WITH A GALLIUM VACANCY IN GAAS AND ALXGA1-XAS [J]. PHYSICAL REVIEW B, 1977, 15 (10) : 4874 - 4882

[13] POSITRON TRANSMISSION AND SCATTERING MEASUREMENTS USING SUPERPOSITION OF ANNIHILATION LINE SHAPES - BACKSCATTER COEFFICIENTS [J]. PHYSICAL REVIEW A, 1973, 7 (01) : 135 - 145

[14] NIELSEN B, 1976, UNPUB 4TH P INT C PO

[15] LIFETIME SPECTRA OF POSITRONS IN IONIC COMPOUNDS [J]. APPLIED PHYSICS, 1974, 3 (05): : 383 - 385

[16] EFFECT OF DOPING ON POSITRON LIFETIME IN SI CRYSTALS [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1974, 7 (16): : 2776 - 2780

[17] POSITRON-ANNIHILATION IN GERMANIUM [J]. APPLIED PHYSICS, 1975, 5 (04): : 367 - 374

[18] STEIN HJ, 1971, RAD EFFECTS SEMICOND

[19] ASSUMPTION-INDEPENDENT SINGLE-PARTICLE WAVE FUNCTIONS FOR POSITRONS IN SOLIDS - APPLICATIONS TO ANGULAR DISTRIBUTIONS IN AL AND SI [J]. PHYSICAL REVIEW, 1968, 171 (02): : 399 - &

[20] EFFECT OF DOPING ON POSITRON-ANNIHILATION IN GAAS [J]. PHYSICS LETTERS A, 1980, 76 (02) : 157 - 159