EFFECT OF DOPING ON POSITRON LIFETIME IN SI CRYSTALS

被引：19

作者：

SEN, P ^{[1
]}

SEN, C ^{[1
]}

机构：

[1] NUCL ACCELERATOR LAB,SUNYA,ALBANY,NY 12222

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1974年 / 7卷 / 16期

关键词：

D O I：

10.1088/0022-3719/7/16/010

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：2776 / 2780

页数：5

共 11 条

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[7] QUASI-POSITRONIUM IN METALS [J].

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[8]

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[9]

Sandmann H., 1969, Semiconductor silicon, P124

[10] POSITRON LIFETIME STUDIES IN SOME CRYSTALS [J].

SEN, P .

JOURNAL OF PHYSICS PART A GENERAL, 1971, 4 (05) :744-&

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