EFFECT OF DOPING ON POSITRON LIFETIME IN SI CRYSTALS

被引:19
作者
SEN, P [1 ]
SEN, C [1 ]
机构
[1] NUCL ACCELERATOR LAB,SUNYA,ALBANY,NY 12222
来源
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1974年 / 7卷 / 16期
关键词
D O I
10.1088/0022-3719/7/16/010
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:2776 / 2780
页数:5
相关论文
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