MICROWAVE PHONON ATTENUATION MEASUREMENTS IN N-TYPE SILICON

[11] ACOUSTIC ATTENUATION BY NEUTRAL DONOR IMPURITY ATOMS IN GERMANIUM [J]. PHYSICAL REVIEW, 1966, 149 (02): : 666 - &

[12] ULTRASONIC WAVE PROPAGATION IN DOPED N-GERMANIUM + P-SILICON [J]. PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 134 (5A): : 1387 - &

[13] MASON WP, 1966, PHYS ACOUST A, V4, P299

[14] INTERACTION OF CONDUCTION ELECTRONS WITH ACOUSTIC WAVES IN MANY-VALLEY SEMICONDUCTORS [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1960, 15 (07) : 1189 - 1199

[15] THE THEORY OF IMPURITY CONDUCTION [J]. ADVANCES IN PHYSICS, 1961, 10 (38) : 107 - 163

[16] ELECTRONS IN DISORDERED STRUCTURES [J]. ADVANCES IN PHYSICS, 1967, 16 (61) : 49 - +

[17] LOW-FREQUENCY CONDUCTIVITY DUE TO HOPPING PROCESSES IN SILICON [J]. PHYSICAL REVIEW, 1961, 122 (06): : 1742 - &

[18] INTERACTION OF MICROWAVE PHONONS WITH DONOR ELECTRONS IN GE AND SI [J]. PHYSICAL REVIEW B, 1970, 1 (10): : 4029 - &

[19] ULTRASONIC LOSS AND GAIN MECHANISMS IN SEMICONDUCTORS [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (10): : 1438 - +

[20] TEMPERATURE DEPENDENCE OF MICROWAVE PHONON ATTENUATION [J]. PHYSICAL REVIEW, 1965, 139 (2A): : A501 - +

[11] ACOUSTIC ATTENUATION BY NEUTRAL DONOR IMPURITY ATOMS IN GERMANIUM [J]. PHYSICAL REVIEW, 1966, 149 (02): : 666 - &

[12] ULTRASONIC WAVE PROPAGATION IN DOPED N-GERMANIUM + P-SILICON [J]. PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 134 (5A): : 1387 - &

[13] MASON WP, 1966, PHYS ACOUST A, V4, P299

[14] INTERACTION OF CONDUCTION ELECTRONS WITH ACOUSTIC WAVES IN MANY-VALLEY SEMICONDUCTORS [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1960, 15 (07) : 1189 - 1199

[15] THE THEORY OF IMPURITY CONDUCTION [J]. ADVANCES IN PHYSICS, 1961, 10 (38) : 107 - 163

[16] ELECTRONS IN DISORDERED STRUCTURES [J]. ADVANCES IN PHYSICS, 1967, 16 (61) : 49 - +

[17] LOW-FREQUENCY CONDUCTIVITY DUE TO HOPPING PROCESSES IN SILICON [J]. PHYSICAL REVIEW, 1961, 122 (06): : 1742 - &

[18] INTERACTION OF MICROWAVE PHONONS WITH DONOR ELECTRONS IN GE AND SI [J]. PHYSICAL REVIEW B, 1970, 1 (10): : 4029 - &

[19] ULTRASONIC LOSS AND GAIN MECHANISMS IN SEMICONDUCTORS [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (10): : 1438 - +

[20] TEMPERATURE DEPENDENCE OF MICROWAVE PHONON ATTENUATION [J]. PHYSICAL REVIEW, 1965, 139 (2A): : A501 - +