CAVITY COMPETITION IN ANOMALOUS EMISSION INTENSITY IN DOUBLE-HETEROSTRUCTURE (DH) LASERS

被引：22

作者：

CAMPOS, MD

HWANG, CJ

BOSSI, RI

RIPPER, JE

机构：

[1] UNIV ESTADUAL CAMPINAS,INST FIS GLEB WATAGHIN,CAMPINAS,SP,BRAZIL

[2] HEWLETT PACKARD LABS,PALO ALTO,CA 94304

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1977年 / 13卷 / 08期

关键词：

D O I：

10.1109/JQE.1977.1069422

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：687 / 691

页数：5

共 9 条

[1] VARIATION OF SPONTANEOUS EMISSION WITH CURRENT IN GAAS HOMOSTRUCTURE AND DOUBLE-HETEROSTRUCTURE INJECTION LASERS [J].

BROSSON, P ;

RIPPER, JE ;

PATEL, NB .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1973, QE 9 (02) :273-280

[2]

BROSSON P, TO BE PUBLISHED

[3] IMPROVED LIGHT-OUTPUT LINEARITY IN STRIPE-GEOMETRY DOUBLE-HETEROSTRUCTURE (AL,GA)AS LASERS [J].

DIXON, RW ;

NASH, FR ;

HARTMAN, RL ;

HEPPLEWHITE, RT .

APPLIED PHYSICS LETTERS, 1976, 29 (06) :372-374

[4] PROTON-BOMBARDMENT FORMATION OF STRIPE-GEOMETRY HETEROSTRUCTURE LASERS FOR 300 K CW OPERATION [J].

DYMENT, JC ;

NORTH, JC ;

MILLER, BI ;

RIPPER, JE ;

DASARO, LA .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (06) :726-&

[5]

HWANG CJ, 1975, 7TH SEM ANN M NAT SC

[6] CHARACTERISTICS OF RF INJECTION LOCKING OF SELF-PULSING IN AN ALGAAS DH JUNCTION LASER [J].

LEE, TP ;

SERRA, TJB .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1976, 12 (06) :368-371

[7] RESONANT MODES OF GAAS JUNCTION LASERS .2. HIGH-INJECTION LEVEL [J].

PAOLI, TL ;

RIPPER, JE ;

ZACHOS, TH .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1969, QE 5 (06) :271-+

[8] CW DEGRADATION AT 300 DEGREES K OF GAAS DOUBLE-HETEROSTRUCTURE JUNCTION LASERS .1. EMISSION-SPECTRA [J].

PAOLI, TL ;

HAKKI, BW .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (09) :4108-4112

[9] FILAMENTS IN SEMICONDUCTOR LASERS [J].

RIPPER, JE ;

NUNES, FD ;

PATEL, NB .

APPLIED PHYSICS LETTERS, 1975, 27 (06) :328-330

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