SCALING RELATIONS FOR STRAINED-LAYER RELAXATION

被引：11

作者：

DODSON, BW

TSAO, JY

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 13期

关键词：

D O I：

10.1063/1.101594

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1345 / 1347

页数：3

共 16 条

[1] STRESS DEPENDENCE OF DISLOCATION GLIDE ACTIVATION-ENERGY IN SINGLE-CRYSTAL SILICON-GERMANIUM ALLOYS UP TO 2.6 GPA [J].

DODSON, BW ;

TSAO, JY .

PHYSICAL REVIEW B, 1988, 38 (17) :12383-12387

[2] RELAXATION OF STRAINED-LAYER SEMICONDUCTOR STRUCTURES VIA PLASTIC-FLOW [J].

DODSON, BW ;

TSAO, JY .

APPLIED PHYSICS LETTERS, 1987, 51 (17) :1325-1327

[3] NON-NEWTONIAN STRAIN RELAXATION IN HIGHLY STRAINED SIGE HETEROSTRUCTURES [J].

DODSON, BW ;

TSAO, JY .

APPLIED PHYSICS LETTERS, 1988, 53 (25) :2498-2500

[4] CORRECTION [J].

DODSON, BW .

APPLIED PHYSICS LETTERS, 1988, 52 (10) :852-852

[5]

DODSON BW, 1988, MULTILAYERS SYNTHESI, V103, P141

[6] ONE-DIMENSIONAL DISLOCATIONS .2. MISFITTING MONOLAYERS AND ORIENTED OVERGROWTH [J].

FRANK, FC ;

VANDERMERWE, JH .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1949, 198 (1053) :216-225

[7]

FROST HJ, 1982, DEFORMATION MECHANIS

[8] DISLOCATIONS AND PLASTICITY IN SEMICONDUCTORS .1. DISLOCATION-STRUCTURES AND DYNAMICS [J].

GEORGE, A ;

RABIER, J .

REVUE DE PHYSIQUE APPLIQUEE, 1987, 22 (09) :941-966

[9] CONTROVERSY OF CRITICAL LAYER THICKNESS FOR INGAAS/GAAS STRAINED-LAYER EPITAXY [J].

GOURLEY, PL ;

FRITZ, IJ ;

DAWSON, LR .

APPLIED PHYSICS LETTERS, 1988, 52 (05) :377-379

[10]

HIRTH JP, 1982, THEORY DISLOCATIONS, P90

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