LOW-TEMPERATURE MOVPE GROWTH OF ZNSE LAYERS USING ALKYLS IN A DOUBLE ZONE REACTOR

被引:5
作者
BRIOT, O [1 ]
DELMAS, R [1 ]
TEMPIER, N [1 ]
SAUVEZON, R [1 ]
AULOMBARD, RL [1 ]
机构
[1] UNIV MONTPELLIER 2, ETUD SEMICOND GRP, F-34060 MONTPELLIER, FRANCE
关键词
D O I
10.1016/0022-0248(89)90330-8
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:857 / 859
页数:3
相关论文
共 13 条
[1]  
BLANCONNIER P, 1978, THIN SOLID FILMS, V55, P375, DOI 10.1016/0040-6090(78)90154-2
[2]   REACTOR PRESSURE-DEPENDENCE OF PROPERTIES OF UNDOPED ZNSE GROWN BY LOW-PRESSURE OMVPE [J].
FUJITA, S ;
YODO, T ;
MATSUDA, Y ;
SASAKI, A .
JOURNAL OF CRYSTAL GROWTH, 1985, 71 (01) :169-172
[3]   SELF-COMPENSATION LIMITED CONDUCTIVITY IN BINARY SEMICONDUCTORS .1. THEORY [J].
MANDEL, G .
PHYSICAL REVIEW, 1964, 134 (4A) :1073-+
[4]   SELF-COMPENSATION-LIMITED CONDUCTIVITY IN BINARY SEMICONDUCTORS .3. EXPECTED CORRELATIONS WITH FUNDAMENTAL PARAMETERS [J].
MANDEL, G ;
MOREHEAD, FF ;
WAGNER, PR .
PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 136 (3A) :A826-&
[5]   COHERENT GROWTH OF ZNSE ON GAAS BY MOCVD [J].
MITSUHASHI, H ;
MITSUISHI, I ;
MIZUTA, M ;
KUKIMOTO, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (08) :L578-L580
[6]  
NEUMARK GF, 1980, J APPL PHYS, V51, P3383, DOI 10.1063/1.328051
[7]   LATTICE-RELAXATION MECHANISM OF ZNSE LAYER GROWN ON A (100) GAAS SUBSTRATE TILTED TOWARD (011) [J].
OHKI, A ;
SHIBATA, N ;
ZEMBUTSU, S .
JOURNAL OF APPLIED PHYSICS, 1988, 64 (02) :694-698
[8]   HIGH-QUALITY ZNSE FILM GROWTH BY 0.1-ATM MOVPE UNDER THE DIETHYLZINC DIFFUSION-LIMITED CONDITION [J].
SHIBATA, N ;
OHKI, A ;
ZEMBUTSU, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1987, 26 (08) :1305-1309
[9]   ORGANOMETALLIC VAPOR-DEPOSITION OF EPITAXIAL ZNSE FILMS ON GAAS SUBSTRATES [J].
STUTIUS, W .
APPLIED PHYSICS LETTERS, 1978, 33 (07) :656-658