METAL-NITRIDE-OXIDE-SEMICONDUCTOR TRANSISTOR CHARACTERIZATION USING IMPLANTED MNOS CAPACITORS

MNOS capacitors were fabricated using ion implantation to replace the conventional diffusion step required to provide a source of carriers for inversion layer formation during write-erase cycling. The electrical characteristics of the implanted capacitors closely approximate those of the diffused capacitors. A single implant at 25 keV of 5 × 1014 ions cm-2 using shadow mask metal dots for masking and a 500 °C sinter operation for activation of the implant was shown to be optimum for an Si3N4 thickness of 475 Å. No deleterious effects were observed to result from the implantation step. © 1979.