INFLUENCE OF SILICON HEAT-TREATMENTS ON MINORITY-CARRIER GENERATION AND DIELECTRIC-BREAKDOWN IN MOS STRUCTURES

被引：13

作者：

GREEN, JM ^{[1
]}

OSBURN, CM ^{[1
]}

SEDGWICK, TO ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1974年 / 3卷 / 02期

关键词：

D O I：

10.1007/BF02652958

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：579 / 599

页数：21

共 33 条

[1] The Formation and Devitrification of Oxides on Silicon [J].

Ainger, F. W. .

JOURNAL OF MATERIALS SCIENCE, 1966, 1 (01) :1-13

[2]

Boltaks B.I., 1963, DIFFUSION SEMICONDUC

[3]

CAMPBELL DR, 1972, J ELECTROCHEM SOC, V119, pC238

[4] CONTAMINANTS ON CHEMICALLY ETCHED SILICON SURFACES - LEED-AUGER METHOD [J].

CHANG, CC .

SURFACE SCIENCE, 1970, 23 (02) :283-&

[5] EFFECTS OF MATERIAL AND PROCESSING PARAMETERS ON DIELECTRIC STRENGTH OF THERMALLY GROWN SIO2 FILMS [J].

CHOU, NJ ;

ELDRIDGE, JM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (10) :1287-+

[6] DIELECTRIC BREAKDOWN INDUCED BY SODIUM IN MOS STRUCTURES [J].

DISTEFANO, TH .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) :527-528

[7] DEFECT GENERATION IN SILICON [J].

DUMIN, DJ ;

HENRY, WN .

METALLURGICAL TRANSACTIONS, 1971, 2 (03) :677-&

[8]

FRITZSCHE C, 1967, Z ANGEW PHYS, V24, P43

[9]

Goldschmidt H. J., 1967, INTERSTITIAL ALLOYS, DOI [10.1007/978-1-4899-5880-8, DOI 10.1007/978-1-4899-5880-8]

[10]

GRIENAUER H, 1973, SEMICONDUCTOR SILICO

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