INFLUENCE OF SILICON HEAT-TREATMENTS ON MINORITY-CARRIER GENERATION AND DIELECTRIC-BREAKDOWN IN MOS STRUCTURES

被引：13

作者：

GREEN, JM ^{[1
]}

OSBURN, CM ^{[1
]}

SEDGWICK, TO ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1974年 / 3卷 / 02期

关键词：

D O I：

10.1007/BF02652958

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：579 / 599

页数：21

共 33 条

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[19] ACCELERATED DIELECTRIC BREAKDOWN OF SILICON DIOXIDE FILMS [J].

OSBURN, CM ;

CHOU, NJ .

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[20] EFFECT OF MOBILE SODIUM IONS ON FIELD ENHANCEMENT DIELECTRIC BREAKDOWN IN SIO2 FILMS ON SILICON [J].

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