INTRACENTER TRANSITIONS IN TRIPLY IONIZED ERBIUM IONS DIFFUSED INTO III-V COMPOUND SEMICONDUCTORS

被引：28

作者：

ZHAO, XW

HIRAKAWA, K

IKOMA, T

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 08期

关键词：

D O I：

10.1063/1.100871

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：712 / 714

页数：3

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共 9 条

[1] INCORPORATION OF ERBIUM IN GAAS BY LIQUID-PHASE EPITAXY
BANTIEN, F
BAUSER, E
WEBER, J
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (08) : 2803 - 2806
[2] 1.54-MU-M LUMINESCENCE OF ERBIUM-IMPLANTED III-V SEMICONDUCTORS AND SILICON
ENNEN, H
SCHNEIDER, J
POMRENKE, G
AXMANN, A
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (10) : 943 - 945
[3] PHOTOLUMINESCENCE EXCITATION MEASUREMENTS ON GAAS-ER GROWN BY MOLECULAR-BEAM EPITAXY
ENNEN, H
WAGNER, J
MULLER, HD
SMITH, RS
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (10) : 4877 - 4879
[4] KAMINSKII AA, 1980, LASER CRYSTAL, P1
[5] Kittel C., 1986, INTRO SOLID STATE PH, P76
[6] PHOTOLUMINESCENCE OPTIMIZATION AND CHARACTERISTICS OF THE RARE-EARTH ELEMENT ERBIUM IMPLANTED IN GAAS, INP, AND GAP
POMRENKE, GS
ENNEN, H
HAYDL, W
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (02) : 601 - 610
[7] OBSERVATION OF ENHANCED SINGLE LONGITUDINAL MODE-OPERATION IN 1.5-MU-M GAINASP ERBIUM-DOPED SEMICONDUCTOR INJECTION-LASERS
TSANG, WT
LOGAN, RA
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (25) : 1686 - 1688
[8] ER-DOPED INP AND GAAS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
UWAI, K
NAKAGOME, H
TAKAHEI, K
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (13) : 1010 - 1012
[9] SINGLE LONGITUDINAL MODE-OPERATION OF ER-DOPED 1.5-MU-M INGAASP LASERS
VANDERZIEL, JP
OBERG, MG
LOGAN, RA
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (19) : 1313 - 1315