STUDY OF THE SI(111)7X7 SURFACE BY RHEED ROCKING CURVE ANALYSIS

被引:45
作者
HANADA, T [1 ]
INO, S [1 ]
DAIMON, H [1 ]
机构
[1] UNIV TOKYO,FAC SCI,DEPT PHYS,BUNKYO KU,TOKYO 113,JAPAN
关键词
D O I
10.1016/0039-6028(94)91162-2
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Several integer and fractional rocking curves of reflection high energy electron diffraction (RHEED) from the Si(111)7 x 7 surface have been measured using a SIT camera. Dynamical calculation of RHEED intensity and minimization of the reliability factor have been employed to analyze the surface-normal atomic coordinates of the dimer-adatom-stacking fault (DAS) model. The most important parameters to be in agreement with the experimental results are outward displacements of the adatoms and the rest-atoms and inward displacements of the second and third layer atoms just below an adatom. It is also demonstrated that some rocking curves are sensitive for stacking faults.
引用
收藏
页码:143 / 154
页数:12
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