FLUCTUATIONS IN SUBMICROMETER SEMICONDUCTING DEVICES CAUSED BY THE RANDOM POSITIONS OF DOPANTS

[1] [Anonymous], 1964, HDB MATH FUNCTIONS

[2] BARRIER HEIGHT FLUCTUATIONS IN VERY SMALL DEVICES DUE TO THE DISCRETENESS OF THE DOPANTS [J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (11) : 5178 - 5180

[3] Stochastic problems in physics and astronomy [J]. REVIEWS OF MODERN PHYSICS, 1943, 15 (01) : 0001 - 0089

[4] ELECTRONIC STATES IN NARROW SEMICONDUCTING WIRES NEAR THRESHOLD [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (10) : 995 - 1009

[5] EFFECT OF RANDOMNESS IN DISTRIBUTION OF IMPURITY IONS ON FET THRESHOLDS IN INTEGRATED ELECTRONICS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1975, 10 (04) : 245 - 247

[6] Landauer R., 1978, AIP Conference Proceedings, P2, DOI 10.1063/1.31150

[7] QUASI-ONE-DIMENSIONAL ELECTRON-STATES IN A SPLIT-GATE GAAS/ALGAAS HETEROSTRUCTURE [J]. SURFACE SCIENCE, 1988, 196 (1-3) : 101 - 106

[8] LOCALIZATION EFFECTS CAUSED BY THE REMOTE DONORS IN MODULATION-DOPED QUANTUM WELLS [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (01) : 12 - 17

[9] POSSIBLE OBSERVATION OF TRANSMISSION RESONANCES IN GAAS-ALXGA1-XAS TRANSISTORS [J]. PHYSICAL REVIEW B, 1988, 38 (02): : 1554 - 1557

[10] 1986, COMPUTER SIMULATION, P17

[1] [Anonymous], 1964, HDB MATH FUNCTIONS

[2] BARRIER HEIGHT FLUCTUATIONS IN VERY SMALL DEVICES DUE TO THE DISCRETENESS OF THE DOPANTS [J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (11) : 5178 - 5180

[3] Stochastic problems in physics and astronomy [J]. REVIEWS OF MODERN PHYSICS, 1943, 15 (01) : 0001 - 0089

[4] ELECTRONIC STATES IN NARROW SEMICONDUCTING WIRES NEAR THRESHOLD [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (10) : 995 - 1009

[5] EFFECT OF RANDOMNESS IN DISTRIBUTION OF IMPURITY IONS ON FET THRESHOLDS IN INTEGRATED ELECTRONICS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1975, 10 (04) : 245 - 247

[6] Landauer R., 1978, AIP Conference Proceedings, P2, DOI 10.1063/1.31150

[7] QUASI-ONE-DIMENSIONAL ELECTRON-STATES IN A SPLIT-GATE GAAS/ALGAAS HETEROSTRUCTURE [J]. SURFACE SCIENCE, 1988, 196 (1-3) : 101 - 106

[8] LOCALIZATION EFFECTS CAUSED BY THE REMOTE DONORS IN MODULATION-DOPED QUANTUM WELLS [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (01) : 12 - 17

[9] POSSIBLE OBSERVATION OF TRANSMISSION RESONANCES IN GAAS-ALXGA1-XAS TRANSISTORS [J]. PHYSICAL REVIEW B, 1988, 38 (02): : 1554 - 1557

[10] 1986, COMPUTER SIMULATION, P17