RESONANT TUNNELING IN COUPLED QUANTUM DOTS

被引：36

作者：

TEWORDT, M ^{[1
]}

ASAHI, H ^{[1
]}

LAW, VJ ^{[1
]}

SYME, RT ^{[1
]}

KELLY, MJ ^{[1
]}

RITCHIE, DA ^{[1
]}

CHURCHILL, A ^{[1
]}

FROST, JEF ^{[1
]}

HUGHES, RH ^{[1
]}

JONES, GAC ^{[1
]}

机构：

[1] GEC MARCONI LTD,HIRST RES CTR,WEMBLEY HA9 7PP,MIDDX,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 05期

关键词：

D O I：

10.1063/1.106564

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Resonant tunneling in GaAs-AlGaAs triple barrier diodes is studied as a function of the diode diameter between d = 8-mu-m and d = 100 nm. We observe, only in the very small diodes, a novel spikelike fine structure in the low temperature current-voltage characteristics, superimposed upon the main, broad resonant tunneling peaks. These spikes are assigned to resonant tunneling between zero-dimensional, coupled quantum dot states. Furthermore, a strong quenching of the low bias main peaks (compared with the high bias main peaks) is observed with decreasing diode diameter. This effect is clearly reproducible and may be an indication that the low bias peaks employ different tunneling mechanisms than the high bias peaks.

引用

页码：595 / 597

页数：3

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