CHEMICAL TREATMENT EFFECTS ON SI SURFACES IN SC2 SOLUTIONS STUDIED BY SPECTROSCOPIC ELLIPSOMETRY

被引：13

作者：

KOBAYASHI, K

SUSUKI, T

ADACHI, S

机构：

[1] Department of Electronic Engineering, Gunma University, Kiryu-shi, Gunma

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1994年 / 33卷 / 1A期

关键词：

SI WAFER; SC2; CLEANING; RCA ETCHANT; CHEMICAL OXIDE; SPECTROSCOPIC ELLIPSOMETRY;

D O I：

10.1143/JJAP.33.L15

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Si surfaces chemically treated in HCl:H2O2:H2O=X:1:6 [X=1 (SC2) and 0] at 80-degrees-C have been studied using spectroscopic ellipsometry (SE). The SE data clearly indicate that both the X=1 and 0 solutions result in surface chemical oxidation. The chemical oxidation occurs immediately upon immersion of the samples in the solutions. The thickness of chemical oxide shows a saturated value of approximately 9.5 +/- 1 (X=1) and approximately 11.5 +/- 1 angstrom (X=0) against immersion time t.

引用

页码：L15 / L17

页数：3

共 18 条

[1] OPTICAL DISPERSION-RELATIONS FOR SI AND GE
ADACHI, S
[J]. JOURNAL OF APPLIED PHYSICS, 1989, 66 (07) : 3224 - 3231
[2] MODEL DIELECTRIC-CONSTANTS OF SI AND GE
ADACHI, S
[J]. PHYSICAL REVIEW B, 1988, 38 (18) : 12966 - 12976
[3] CHEMICAL TREATMENT EFFECTS OF SI SURFACES IN NH4OH H2O2 H2O SOLUTIONS STUDIED BY SPECTROSCOPIC ELLIPSOMETRY
ADACHI, S
UTANI, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1993, 32 (9A): : L1189 - L1191
[4] ANTIMONY ADSORPTION ON SILICON (111) ANALYZED IN REAL-TIME BY INSITU ELLIPSOMETRY
ANDRIEU, S
DAVITAYA, FA
[J]. SURFACE SCIENCE, 1989, 219 (1-2) : 277 - 293
[5] CHEMICAL ETCHING AND CLEANING PROCEDURES FOR SI, GE, AND SOME III-V COMPOUND SEMICONDUCTORS
ASPNES, DE
STUDNA, AA
[J]. APPLIED PHYSICS LETTERS, 1981, 39 (04) : 316 - 318
[6] AN INSITU ELLIPSOMETRIC STUDY OF AQUEOUS NH4OH TREATMENT OF SILICON
GOULD, G
IRENE, EA
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (04) : 1108 - 1112
[7] KERN W, 1970, RCA REV, V31, P207
[8] KERN W, 1970, RCA REV, V31, P187
[9] STUDY OF SI ETCH RATE IN VARIOUS COMPOSITION OF SC1 SOLUTION
KOBAYASHI, H
RYUTA, J
SHINGYOUJI, T
SHIMANUKI, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1993, 32 (1A-B): : L45 - L47
[10] THE RELATIONSHIP OF THE SILICON SURFACE-ROUGHNESS AND GATE OXIDE INTEGRITY IN NH4OH/H2O2 MIXTURES
MEURIS, M
VERHAVERBEKE, S
MERTENS, PW
HEYNS, MM
HELLEMANS, L
BRUYNSERAEDE, Y
PHILIPOSSIAN, A
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1992, 31 (11A): : L1514 - L1517

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