AN INSITU ELLIPSOMETRIC STUDY OF AQUEOUS NH4OH TREATMENT OF SILICON

被引：23

作者：

GOULD, G

IRENE, EA

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1989年 / 136卷 / 04期

关键词：

D O I：

10.1149/1.2096794

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

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页码：1108 / 1112

页数：5

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