EFFECT OF SILICON SURFACE CLEANING PROCEDURES ON OXIDATION-KINETICS AND SURFACE-CHEMISTRY

被引：21

作者：

DELARIOS, JM ^{[1
]}

HELMS, CR ^{[1
]}

KAO, DB ^{[1
]}

DEAL, BE ^{[1
]}

机构：

[1] FAIRCHILD RES CTR,PALO ALTO,CA 94304

来源：

APPLIED SURFACE SCIENCE | 1987年 / 30卷 / 1-4期

关键词：

The work performed at Stanford University was supported by a grant from Fairchild Semiconductor Corporation;

D O I：

10.1016/0169-4332(87)90068-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：17 / 24

页数：8

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