ON MODELING THE OXIDATION OF SILICON BY DRY OXYGEN

被引：3

作者：

BLANC, J

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1986年 / 133卷 / 09期

关键词：

D O I：

10.1149/1.2109066

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1981 / 1982

页数：2

共 11 条

[1]

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[2]

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[5] ROLE OF STRESS ON THE PARABOLIC KINETIC CONSTANT FOR DRY SILICON OXIDATION [J].

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[6]

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[7]

HAN CJ, 1986, SPR EL SOC M

[8] THERMAL OXIDATION OF SILICON - INSITU MEASUREMENT OF GROWTH-RATE USING ELLIPSOMETRY [J].

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[9]

HOPPER ML, COMMUNICATION

[10] THERMAL-OXIDATION OF SILICON IN DRY OXYGEN - ACCURATE DETERMINATION OF THE KINETIC RATE CONSTANTS [J].

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JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (07) :1745-1753

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