EFFECT OF AN AUGMENTED OXYGEN IMPLANT ON ELECTRON TRAPPING IN BURIED OXIDES

被引：11

作者：

LAMBERT, RJ ^{[1
]}

BHAR, TN ^{[1
]}

HUGHES, HL ^{[1
]}

机构：

[1] UNIV DIST COLUMBIA, WASHINGTON, DC 20008 USA

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 24期

关键词：

D O I：

10.1063/1.111313

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Standard silicon on insulator wafers were prepared by separation by implantation of oxygen. The standard implant of 1.8 X 10(18) O+ cm-2 was augmented by an additional implant of 10(17) O+ cm-2. The effect of this augmented implantation of oxygen on electron trap density and cross section was investigated using avalanche injection of electrons into the buried oxide. The shift in the high-frequency capacitance-voltage curve was monitored as a function of injected charge. Analysis of the mid-gap voltage shift versus charge shows no change in the effective density of electron traps. There is a factor of 6.8 decrease in the capture cross section for samples that received the supplemental oxygen implantation.

引用

页码：3291 / 3292

页数：2

共 9 条

[1] SUBTHRESHOLD SLOPE OF THIN-FILM SOI MOSFETS [J].