COMPOSITIONS OF DEPOSITED FILMS USING ION-BEAM SPUTTERING ZR WITH REACTIVE OXYGEN

The films deposited by ion beam sputtering Zr with different pressures of reactive oxygen are studied by using RBS and XPS. The results show that with increasing the reactive oxygen pressure in this experiment, alpha-Zr, ZrO and ZrO2 were formed. The observed chemical shifts of Zr about 0.97 eV per metal-oxygen bond confirm that further oxygen exposure leads to the formation of different zirconium oxides and suggest existence of four different oxidation states of zirconium. It was also found that all these films were contaminated by carbon on the uppermost surface and there existed a transition layer between film and substrate.