OXIDATION BEHAVIOR OF AU-SI FILMS

被引:13
作者
HEWETT, CA
LAU, SS
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10.1063/1.98057
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O59 [应用物理学];
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页码:827 / 829
页数:3
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共 7 条
[1]   SELF-CONFINED METALLIC INTERCONNECTS FOR VERY LARGE-SCALE INTEGRATION [J].
BARTUR, M ;
NICOLET, MA .
APPLIED PHYSICS LETTERS, 1984, 44 (02) :263-264
[2]  
Cros A., 1980, J PHYS C SOLID STATE, V41, P795
[3]  
HEWETT CA, 1985, P MATERIALS RES SOC, V40, P329
[4]   FORMATION OF SILICON OXIDE OVER GOLD LAYERS ON SILICON SUBSTRATES [J].
HIRAKI, A ;
MAYER, JW ;
LUGUJJO, E .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (09) :3643-&
[5]  
Hiraki A., 1977, PROGR STUDY POINT DE, P393
[6]   STATE OF SI AND SN IN GLASSY AU ALLOYS [J].
HUBER, E ;
VONALLMEN, M .
PHYSICAL REVIEW B, 1985, 31 (06) :3338-3342
[7]  
Murarka S. P., 1983, SILICIDES VLSI APPL, V1, P5