PHOTOEMISSION OBSERVATION OF A SURFACE STATE OF TUNGSTEN

[21] TARNG ML, 1972, 32 P PHYS EL C

[22] EFFECT OF HEATING ON PHOTOELECTRON YIELD OF POLYCRYSTALLINE TUNGSTEN IN VACUUM ULTRAVIOLET [J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1969, 59 (11) : 1494 - +

[23] EFFECT OF OXYGEN ADSORPTION ON PHOTOELECTRON YIELD FROM TUNGSTEN IN VACUUM ULTRAVIOLET [J]. APPLIED PHYSICS LETTERS, 1967, 10 (11) : 305 - +

[24] OBSERVATION OF A BAND OF SILICON SURFACE STATES CONTAINING ONE ELECTRON PER SURFACE ATOM [J]. PHYSICAL REVIEW LETTERS, 1972, 28 (21) : 1381 - &

[21] TARNG ML, 1972, 32 P PHYS EL C

[22] EFFECT OF HEATING ON PHOTOELECTRON YIELD OF POLYCRYSTALLINE TUNGSTEN IN VACUUM ULTRAVIOLET [J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1969, 59 (11) : 1494 - +

[23] EFFECT OF OXYGEN ADSORPTION ON PHOTOELECTRON YIELD FROM TUNGSTEN IN VACUUM ULTRAVIOLET [J]. APPLIED PHYSICS LETTERS, 1967, 10 (11) : 305 - +

[24] OBSERVATION OF A BAND OF SILICON SURFACE STATES CONTAINING ONE ELECTRON PER SURFACE ATOM [J]. PHYSICAL REVIEW LETTERS, 1972, 28 (21) : 1381 - &