共 12 条
- [1] WORK FUNCTION, PHOTOELECTRIC THRESHOLD, AND SURFACE STATES OF ATOMICALLY CLEAN SILICON [J]. PHYSICAL REVIEW, 1962, 127 (01): : 150 - &
- [2] PHOTOELECTRIC EMISSION FROM SILICON FOR PHOTON ENERGIES OF 6 TO 9.6 EV [J]. PHYSICAL REVIEW, 1967, 161 (03): : 746 - &
- [3] OPTICAL ABSORPTION OF SURFACE STATES IN ULTRAHIGH VACUUM CLEAVED (111) SURFACES OF GE AND SI [J]. PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (10): : 3398 - +
- [4] EASTMAN DE, TO BE PUBLISHED
- [5] Eden R. C., 1970, Review of Scientific Instruments, V41, P252, DOI 10.1063/1.1684483
- [6] EDEN RC, 1970, 10TH P INT C PHYS SE, P221
- [8] DIRECT AND INDIRECT EXCITATION PROCESSES IN PHOTOELECTRIC EMISSION FROM SILICON [J]. PHYSICAL REVIEW, 1962, 127 (01): : 141 - &
- [9] LOCATION OF L1 AND X3 MINIMA IN GAAS AS DETERMINED BY PHOTOEMISSION STUDIES [J]. PHYSICAL REVIEW, 1968, 174 (03): : 909 - &
- [10] THE MAGNETRON GAUGE - A COLD-CATHODE VACUUM GAUGE [J]. CANADIAN JOURNAL OF PHYSICS, 1959, 37 (11) : 1260 - 1271