SURFACE PROPERTIES OF SI FROM PHOTOELECTRIC EMISSION AT ROOM TEMPERATURE AND 80 DEGREES K

被引：16

作者：

FISCHER, TE

机构：

来源：

SURFACE SCIENCE | 1968年 / 10卷 / 03期

关键词：

D O I：

10.1016/0039-6028(68)90108-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

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页码：399 / &

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[7] PHOTOELECTRIC EMISSION AND WORK FUNCTION OF INP
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[8] SURFACE MEASUREMENTS ON FRESHLY CLEAVED SILICON PARA-NORMAL JUNCTIONS
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[9] DIRECT AND INDIRECT EXCITATION PROCESSES IN PHOTOELECTRIC EMISSION FROM SILICON
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