NUMERICAL-ANALYSIS OF THE WEIGHTED PARTICLE METHOD APPLIED TO THE SEMICONDUCTOR BOLTZMANN-EQUATION

被引：9

作者：

DEGOND, P ^{[1
]}

NICLOT, B ^{[1
]}

机构：

[1] CITROEN,DAT,CSI,CTR TECH,F-78140 VELIZY VILLACOUBL,FRANCE

来源：

NUMERISCHE MATHEMATIK | 1989年 / 55卷 / 05期

关键词：

D O I：

10.1007/BF01398918

中图分类号：

O29 [应用数学];

学科分类号：

070104 ;

摘要：

引用

页码：599 / 618

页数：20

共 23 条

[1]

Adams R.A., 2003, PURE APPL MATH SOB O, V2nd ed.

[2]

Allan G., 1986, HETEROJUNCTIONS SEMI

[3] HIGH-FIELD TRANSPORT IN GAAS, INP AND INAS [J].

BRENNAN, K ;

HESS, K .

SOLID-STATE ELECTRONICS, 1984, 27 (04) :347-357

[4] TRANSIENT ELECTRONIC TRANSPORT IN INP UNDER THE CONDITION OF HIGH-ENERGY ELECTRON INJECTION [J].

BRENNAN, K ;

HESS, K ;

TANG, JYF ;

IAFRATE, GJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (12) :1750-1754

[5]

CONSTANT E, 1985, HOT ELECT TRANSPORT, P227

[6]

Cottet G. H., 1986, Transport Theory and Statistical Physics, V15, P1, DOI 10.1080/00411458608210442

[7] PARTICLE METHODS FOR THE ONE-DIMENSIONAL VLASOV-POISSON EQUATIONS [J].

COTTET, GH ;

RAVIART, PA .

SIAM JOURNAL ON NUMERICAL ANALYSIS, 1984, 21 (01) :52-76

[8]

DEGOND P, 1989, SIMULATION PARTICULA

[9]

DEGOND P, 1988, 2ND P INT C HYP PROB

[10] MONTE-CARLO DETERMINATION OF ELECTRON TRANSPORT PROPERTIES IN GALLIUM ARSENIDE [J].

FAWCETT, W ;

BOARDMAN, AD ;

SWAIN, S .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (09) :1963-&

← 1 2 3 →