OBSERVATIONS OF ARSENIC ATOMS IN SILICON CRYSTALS BY USE OF HELIUM ION SCATTERING

被引：5

作者：

FUJIMOTO, F

KOMAKI, K

HISATAKE, K

NAKAYAMA, H

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1971年 / 5卷 / 03期

关键词：

D O I：

10.1002/pssa.2210050329

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：737 / &

共 7 条

[1] INTERPRETATION OF CHANNELLED-ION BEAM MEASUREMENTS FOR FOREIGN ATOM LOCATION IN CRYSTALS [J].

ALEXANDER, RB ;

DEARNALEY, G ;

MORGAN, DV ;

POATE, JM .

PHYSICS LETTERS A, 1970, A 32 (05) :365-+

[2] CHANNELING EFFECTS IN ENERGY LOSS OF 3-11-MEV PROTONS IN SILICON AND GERMANIUM SINGLE CRYSTALS [J].

APPLETON, BR ;

ERGINSOY, C ;

GIBSON, WM .

PHYSICAL REVIEW, 1967, 161 (02) :330-&

[3]

BOHR N, 1948, MAT FYS MEDD DAN VID, V18

[4] ION IMPLANTATION OF SILICON .I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MEV HELIUM ION SCATTERING [J].

DAVIES, JA ;

DENHARTO.J ;

ERIKSSON, L ;

MAYER, JW .

CANADIAN JOURNAL OF PHYSICS, 1967, 45 (12) :4053-&

[5] IMPLANTATION AND ANNEALING BEHAVIOR OF GROUP 3 AND V DOPANTS IN SILICON AS STUDIED BY CHANNELING TECHNIQUE [J].

ERIKSSON, L ;

DAVIES, JA ;

JOHANSSON, NG ;

MAYER, JW .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (02) :842-+

[6] EFFECTS OF CRYSTAL SURFACE AND IMPERFECTIONS ON CHANNELING PHENOMENA OF PROTONS [J].

FUJIMOTO, F ;

KOMAKI, K ;

NAKAYAMA, H .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1971, 5 (03) :725-&

[7]

WATANABE M, TO BE PUBLISHED

← 1 →