COMPUTER-AIDED DEVICE OPTIMIZATION FOR MOS-VLSI

[1] ANTONIADAS DA, 1978, 50192 STANF EL LAB T

[2] SHORT-CHANNEL MOSFETS IN THE PUNCHTHROUGH CURRENT MODE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 446 - 453

[3] DESIGN AND CHARACTERISTICS OF N-CHANNEL INSULATED-GATE FIELD-EFFECT TRANSISTORS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1973, 17 (05) : 430 - 442

[4] DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) : 256 - 268

[5] DENNARD RH, 1972, IEEE INT EL DEV M WA

[6] Grove A S, 1967, PHYS TECHNOLOGY SEMI

[7] JOHNSON WS, 1974, IEEE INT ELECTRON DE

[8] ANALYSIS OF THRESHOLD VOLTAGE FOR SHORT-CHANNEL IGFETS [J]. SOLID-STATE ELECTRONICS, 1973, 16 (12) : 1407 - 1417

[9] NIHIRA H, 1978, IEEE INT ELECTRON DE

[10] PERESSINI PP, 1973, IEEE INT ELECTRON DE

[1] ANTONIADAS DA, 1978, 50192 STANF EL LAB T

[2] SHORT-CHANNEL MOSFETS IN THE PUNCHTHROUGH CURRENT MODE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 446 - 453

[3] DESIGN AND CHARACTERISTICS OF N-CHANNEL INSULATED-GATE FIELD-EFFECT TRANSISTORS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1973, 17 (05) : 430 - 442

[4] DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) : 256 - 268

[5] DENNARD RH, 1972, IEEE INT EL DEV M WA

[6] Grove A S, 1967, PHYS TECHNOLOGY SEMI

[7] JOHNSON WS, 1974, IEEE INT ELECTRON DE

[8] ANALYSIS OF THRESHOLD VOLTAGE FOR SHORT-CHANNEL IGFETS [J]. SOLID-STATE ELECTRONICS, 1973, 16 (12) : 1407 - 1417

[9] NIHIRA H, 1978, IEEE INT ELECTRON DE

[10] PERESSINI PP, 1973, IEEE INT ELECTRON DE