TEMPERATURE-DEPENDENCE OF THE RADIATION-INDUCED CHANGE OF DEPLETION VOLTAGE IN SILICON PIN DETECTORS

被引：70

作者：

ZIOCK, HJ

HOLZSCHEITER, K

MORGAN, A

PALOUNEK, APT

ELLISON, J

HEINSON, AP

MASON, M

WIMPENNY, SJ

BARBERIS, E

CARTIGLIA, N

GRILLO, A

OSHAUGHNESSY, K

RAHN, J

RINALDI, P

ROWE, WA

SADROZINSKI, HFW

SEIDEN, A

SPENCER, E

WEBSTER, A

WICHMANN, R

WILDER, M

FRAUTSCHI, MA

MATTHEWS, JAJ

MCDONALD, D

SKINNER, D

COUPAL, D

PAL, T

机构：

[1] UNIV CALIF RIVERSIDE,RIVERSIDE,CA 92521

[2] UNIV CALIF SANTA CRUZ,SANTA CRUZ INST PARTICLE PHYS,SANTA CRUZ,CA 95064

[3] SUPERCONDUCTING SUPER COLLIDER LAB,DALLAS,TX 75237

[4] UNIV NEW MEXICO,ALBUQUERQUE,NM 87131

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1994年 / 342卷 / 01期

关键词：

D O I：

10.1016/0168-9002(94)91415-X

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We present a study of how temperature affects the change in the depletion voltage of silicon PIN detectors damaged by radiation. We study the initial radiation damage and the short-term and long-term annealing of that damage as a function of temperature in the range from - 10-degrees-C to + 50-degrees-C, and as a function of 800 MeV proton fluence up to 1.5 X 10(14) p/cm2. We express the pronounced temperature dependences in a simple model in terms of two annealing time constants which depend exponentially on the temperature.

引用

页码：96 / 104

页数：9

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