EMPIRICAL TIGHT-BINDING FORCE MODEL FOR MOLECULAR-DYNAMICS SIMULATION OF SI

被引：112

作者：

WANG, CZ ^{[1
]}

CHAN, CT ^{[1
]}

HO, KM ^{[1
]}

机构：

[1] IOWA STATE UNIV SCI & TECHNOL,DEPT PHYS,AMES,IA 50011

来源：

PHYSICAL REVIEW B | 1989年 / 39卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.39.8586

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：8586 / 8592

页数：7

共 24 条

[1] SURFACE RECONSTRUCTION AND VIBRATIONAL EXCITATIONS OF SI(001) [J].

ALERHAND, OL ;

MELE, EJ .

PHYSICAL REVIEW B, 1987, 35 (11) :5533-5546

[2] DISPERSION AND DIPOLE ACTIVITY OF SURFACE PHONONS ON SI(111) 2X1 [J].

ALERHAND, OL ;

MELE, EJ .

PHYSICAL REVIEW B, 1988, 37 (05) :2536-2550

[3]

[Anonymous], ELECTRONIC STRUCTURE

[4] INTERATOMIC POTENTIALS FOR SILICON STRUCTURAL ENERGIES [J].

BISWAS, R ;

HAMANN, DR .

PHYSICAL REVIEW LETTERS, 1985, 55 (19) :2001-2004

[5] DISSOCIATIVE VALENCE FORCE-FIELD POTENTIAL FOR SILICON [J].

BRENNER, DW ;

GARRISON, BJ .

PHYSICAL REVIEW B, 1986, 34 (02) :1304-1307

[6] UNIFIED APPROACH FOR MOLECULAR-DYNAMICS AND DENSITY-FUNCTIONAL THEORY [J].

CAR, R ;

PARRINELLO, M .

PHYSICAL REVIEW LETTERS, 1985, 55 (22) :2471-2474

[7] ENERGY-MINIMIZATION APPROACH TO ATOMIC GEOMETRY OF SEMICONDUCTOR SURFACES [J].

CHADI, DJ .

PHYSICAL REVIEW LETTERS, 1978, 41 (15) :1062-1065

[8] THEORETICAL-STUDY OF THE ATOMIC-STRUCTURE OF SILICON (211), (311), AND (331) SURFACES [J].

CHADI, DJ .

PHYSICAL REVIEW B, 1984, 29 (02) :785-792

[9] STABILITIES OF SINGLE-LAYER AND BILAYER STEPS ON SI(001) SURFACES [J].

CHADI, DJ .

PHYSICAL REVIEW LETTERS, 1987, 59 (15) :1691-1694

[10] LATTICE-DYNAMICS OF SILICON WITH EMPIRICAL MANY-BODY POTENTIALS [J].

COWLEY, ER .

PHYSICAL REVIEW LETTERS, 1988, 60 (23) :2379-2381

← 1 2 3 →