RADIATION ENHANCED OUTDIFFUSION DURING ION-IMPLANTATION

被引：12

作者：

ANTTILA, A

HAUTALA, M

机构：

[1] Department of Physics, University of Helsinki, Helsinki 17, SF-00170

来源：

APPLIED PHYSICS | 1979年 / 19卷 / 02期

关键词：

61.70T; 61.80J;

D O I：

10.1007/BF00932398

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

For a systematic prediction of the radiation-enhanced outdiffusion occurring during implantation, the use of a model based on the effect of vacancy flow on diffusion is described. The model agrees reasonably well with experiments in all twentysix measured cases. For the systematic understanding of the radiation enhanced outdiffusion, an approximative diagram based on the activation energy of self-diffusion is constructed for all pure elements and its application possibilities are discussed. © 1979 Springer-Verlag.

引用

页码：199 / 203

页数：5

共 16 条

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