THEORY OF MINORITY-CARRIER INJECTION

被引：10

作者：

MANIFACIER, JC

HENISCH, HK

GASIOT, J

机构：

[1] PENN STATE UNIV,MAT RES LAB,UNIVERSITY PK,PA 16802

[2] UNIV MONTPELLIER 2,CTR ETUD ELECTR SOLIDES,F-34060 MONTPELLIER,FRANCE

来源：

PHYSICAL REVIEW LETTERS | 1979年 / 43卷 / 10期

关键词：

D O I：

10.1103/PhysRevLett.43.708

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

It is shown that minority-carrier injection into trap-free semiconductors at low current densities can lead to a local field maximum and resistance increase. These features disappear at high current densities, and only then is the more familiar expectation of a resistance decrease fulfilled. © 1979 The American Physical Society.

引用

页码：708 / 710

页数：3

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