INGAAS/GAAS MULTIPLE STRAINED-LAYER STRUCTURE GROWN ON A LATTICE-MATCHED INGAAS SUBSTRATE WAFER

被引：3

作者：

FRITZ, IJ ^{[1
]}

KLEM, JF ^{[1
]}

SCHIRBER, JE ^{[1
]}

OLSEN, JA ^{[1
]}

BONNER, WA ^{[1
]}

机构：

[1] CRYSTALLOD INC,MARTINSVILLE,NJ 08836

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 15期

关键词：

D O I：

10.1063/1.113289

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Growth of In0.15Ga0.85As/GaAs multilayers are reported on lattice matched In0.04Ga0.96As buffer layers using two different starting substrates: (1) a bulk, lattice-matched, Czochralski-grown In0.04Ga0.96As wafer, and (2) a bulk (unmatched) GaAs wafer. The structures, grown by molecular-beam epitaxy, consist of a 200-nm-thick undoped buffer plus a 28-1/2 period modulation-doped multilayer having 10-nm-thick In0.15Ga0.85As quantum wells and 25-nm-thick GaAs barriers doped over their 10-nm central region. The 4 K Hall mobility of the multilayer grown on the InGaAs substrate is 57% larger than the structure grown on GaAs, despite a low dislocation density observed in transmission electron micrographs of the latter. These results suggest that bulk ternary substrates can provide enhanced performance for future electronic and optoelectronic devices.© 1995 American Institute of Physics.

引用

页码：1957 / 1959

页数：3

共 18 条

[1] DISLOCATION MORPHOLOGY IN GRADED HETEROJUNCTIONS - GAAS1-XPX [J].