SOLUBILITY OF LITHIUM IN DOPED AND UNDOPED SILICON, EVIDENCE FOR COMPOUND FORMATION

被引：45

作者：

REISS, H

FULLER, CS

PIETRUSZKIEWICZ, AJ

机构：

来源：

关键词：

D O I：

10.1063/1.1743021

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：650 / 655

页数：6

共 9 条

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MAITA, JP
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[4] PAULING L, 1942, NATURE CHEM BOND, P81
[5] DRIFT MOBILITIES IN SEMICONDUCTORS .2. SILICON
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[6] CHEMICAL INTERACTIONS AMONG DEFECTS IN GERMANIUM AND SILICON
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[7] IONIZATION AND SOLUBILITY IN SEMICONDUCTORS
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[8] CHEMICAL EFFECTS DUE TO THE IONIZATION OF IMPURITIES IN SEMICONDUCTORS
REISS, H
[J]. JOURNAL OF CHEMICAL PHYSICS, 1953, 21 (07) : 1209 - 1217
[9] REISS H, UNPUBLISHED