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GROWTH OF CDTE-FILMS ON GAAS BY IONIZED CLUSTER BEAM EPITAXY

被引：5
作者：
TANG, HP
FENG, JY
FAN, YD
LI, HD
机构：
[1] Department of Materials Science and Engineering, Tsinghua University, Beijing
来源：
JOURNAL OF CRYSTAL GROWTH | 1991年 / 112卷 / 2-3期
关键词：
D O I：
10.1016/0022-0248(91)90316-W
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Stoichiometric epitaxial films of CdTe were grown on (100)GaAs substrates by ionized cluster beam (ICB) epitaxy. Streaky RHEED patterns indicated good crystallinity and surface flatness of the epitaxial CdTe films. CdTe(100) orientation was obtained when the substrate preheating temperature was 480-degrees-C, while CdTe growth in both (100) and (111) orientations occurred when the substrate preheating temperature was above 550-degrees-C. The characteristics of the ICB growth process were investigated and the cluster-involving growth behavior has been evidenced. When sufficient clusters were generated in the deposition beam under adequate source vapor pressures, the crystalline quality of the resulting CdTe epilayers improved significantly with the increase of kinetic energy of the CdTe clusters. The best CdTe epilayer obtained exhibited a CdTe(400) double crystal rocking curve (DCRC) having a FWHM of 630 arc sec.
引用
收藏
页码：407 / 414
页数：8
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