ON THE SHIFTING AND BROADENING OF IMPURITY BANDS AND THEIR CONTRIBUTION TO THE EFFECTIVE ELECTRICAL BANDGAP NARROWING IN MODERATELY DOPED SEMICONDUCTORS

被引：18

作者：

DHARIWAL, SR

OJHA, VN

SRIVASTAVA, GP

机构：

[1] NATL PHYS LAB,DIV STAND THERMOMETRY,NEW DELHI 110012,INDIA

[2] GOVT COLL,DEPT PHYS,AJMER 305001,INDIA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 01期

关键词：

D O I：

10.1109/T-ED.1985.21907

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：44 / 48

页数：5

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