INTEGRATED ELECTRON-BEAM LITHOGRAPHY FOR 0.25 MU-M DEVICE FABRICATION

被引：4

作者：

BUCCHIGNANO, J

ROSENFIELD, M

PEPPER, G

DAVARI, B

HOLM, F

VISWANATHAN, R

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 06期

关键词：

D O I：

10.1116/1.584674

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1827 / 1831

页数：5

共 8 条

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[2]

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[8] SUBMICRON ELECTRON-BEAM LITHOGRAPHY USING A BEAM SIZE COMPARABLE TO THE LINEWIDTH CONTROL TOLERANCE [J].

ROSENFIELD, MG ;

BUCCHIGNANO, JJ ;

RISHTON, SA ;

KERN, DP ;

KETTELL, LM ;

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