OMVPE GROWTH AND CHARACTERIZATION OF GAINP ON GAAS USING TERTIARY BUTYLPHOSPHINE FOR THE PHOSPHORUS SOURCE

被引：10

作者：

TAKEDA, Y

ARAKI, S

TAKEMI, M

NODA, S

SASAKI, A

机构：

[1] Department of Electrical Engineering, Kyoto University, Kyoto

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1990年 / 29卷 / 07期

关键词：

Gaas substrate; Galnp; Omvpe; Tertiary butylphosphine;

D O I：

10.1143/JJAP.29.L1040

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaInP layers were grown on GaAs substrates by organometallic vapor-phase epitaxy (OMVPE) at atmospheric pressure using trimethylgallium (TMGa), trimethylindium (TMIn) and much less toxic tertiary butylphosphine (TBP) as source gases. Fairly smooth surfaces were obtained at the growth temperature of 65O°C and at the V/III ratio of 78. The electrical and optical characteristics are comparable to those obtained by OMVPE using phosphine as the phosphorous source and far better than the previous results obtained by OMVPE with TBP. The undoped epitaxial layers showed n-type conductivity with electron concentrations of 2–3×1017 cm-3. © 1990 The Japan Society of Applied Physics.

引用

页码：L1040 / L1042

页数：3

共 20 条

[11] MOCVD GROWTH OF ALGAINP AT ATMOSPHERIC-PRESSURE USING TRIETHYLMETALS AND PHOSPHINE [J].