RADIATION DEFECTS IN ION-IMPLANTED SILICON .2. MOSSBAUER-SPECTROSCOPY OF SN-119 DEFECT STRUCTURES FROM IMPLANTATIONS OF RADIOACTIVE TELLURIUM

被引：30

作者：

LARSEN, AN ^{[1
]}

WEYER, G ^{[1
]}

NANVER, L ^{[1
]}

机构：

[1] AARHUS UNIV,INST PHYS,DK-8000 AARHUS C,DENMARK

来源：

PHYSICAL REVIEW B | 1980年 / 21卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.21.4951

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4951 / 4966

页数：16

共 45 条

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[10]

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