RECOMBINATION AND PHOTOCONDUCTIVITY IN AMORPHOUS-SEMICONDUCTORS AT LOW-TEMPERATURES

被引:25
作者
SHKLOVSKII, BI [1 ]
FRITZSCHE, H [1 ]
BARANOVSKII, SD [1 ]
机构
[1] UNIV CHICAGO,JAMES FRANCK INST,CHICAGO,IL 60637
关键词
D O I
10.1016/0022-3093(89)90152-X
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:325 / 329
页数:5
相关论文
共 11 条
[1]  
BARANOVSKII SD, IN PRESS SOV PHYS JE
[2]   LOW-TEMPERATURE PHOTOCONDUCTIVITY IN A-SI-H FILMS [J].
HOHEISEL, M ;
CARIUS, R ;
FUHS, W .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) :457-460
[3]   PHOTOCONDUCTIVITY AND PHOTOLUMINESCENCE OF A-SI-H AT LOW-TEMPERATURE [J].
HOHEISEL, M ;
CARIUS, R ;
FUHS, W .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1984, 63 (03) :313-319
[4]   OPTICALLY INDUCED FREQUENCY-DEPENDENT LOSS IN HYDROGENATED AMORPHOUS-SILICON [J].
LONG, AR ;
ANDERSON, MJ ;
SHIMAKAWA, K ;
IMAGAWA, O .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1988, 21 (36) :L1199-L1204
[5]  
Mott N. F., 1979, ELECT PROCESSES NONC
[6]   LOW-FREQUENCY CONDUCTIVITY DUE TO HOPPING PROCESSES IN SILICON [J].
POLLAK, M ;
GEBALLE, TH .
PHYSICAL REVIEW, 1961, 122 (06) :1742-&
[7]   ELECTRONIC TRANSPORT AND RECOMBINATION IN AMORPHOUS-SEMICONDUCTORS AT LOW-TEMPERATURES [J].
SHKLOVSKII, BI ;
FRITZSCHE, H ;
BARANOVSKII, SD .
PHYSICAL REVIEW LETTERS, 1989, 62 (25) :2989-2992
[8]  
STREET RA, 1984, SEMICONDUCT SEMIMET, V21, P197
[9]   DISTRIBUTION OF RECOMBINATION LIFETIMES IN AMORPHOUS-SILICON [J].
STREET, RA ;
BIEGELSEN, DK .
SOLID STATE COMMUNICATIONS, 1982, 44 (04) :501-505
[10]   LUMINESCENCE DECAY IN GLOW-DISCHARGE DEPOSITED AMORPHOUS SILICON [J].
TSANG, C ;
STREET, RA .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1978, 37 (05) :601-608