REACTIVITY OF III-V AND II-VI SEMICONDUCTORS TOWARD HYDROGEN - SURFACE MODIFICATION AND EVOLUTION IN AIR

被引：14

作者：

BALLUTAUD, D ^{[1
]}

DEBIEMMECHOUVY, C ^{[1
]}

ETCHEBERRY, A ^{[1
]}

DEMIERRY, P ^{[1
]}

SVOB, L ^{[1
]}

机构：

[1] UNIV VERSAILLES ST QUENTIN, ELECTROCHIM & CHIM SOLIDES INORGAN LAB, F-78035 VERSAILLES, FRANCE

来源：

APPLIED SURFACE SCIENCE | 1995年 / 84卷 / 02期

关键词：

D O I：

10.1016/0169-4332(94)00477-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In the present work, gallium arsenide is submitted to hydrogen radiofrequency plasma, and cadmium telluride either to hydrogen radiofrequency plasma, to hydrogen implantation by a Kaufman source or to annealing under molecular hydrogen gas. The different hydrogen treatments induce a modification of the surface stoichiometry, resulting in cation (Ga or Cd) enrichment compared to the initial chemically etched surface, and a deoxidation of the semiconductor surface. This new surface chemical state is more or less stable with respect to further oxidation in air ambient. This-stability in air is correlated to the difference from stoichiometry (gallium or cadmium enrichment) and the simultaneous accumulation of hydrogen in the superficial layers of the compound.

引用

页码：187 / 192

页数：6

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