X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY OF GAAS SURFACE-EXPOSED TO A RF HYDROGEN PLASMA

被引：8

作者：

DEBIEMMECHOUVY, C ^{[1
]}

BALLUTAUD, D ^{[1
]}

PESANT, JC ^{[1
]}

ETCHEBERRY, A ^{[1
]}

机构：

[1] CNRS, LAB PHYS SOLIDES BELLEVUE, F-92195 MEUDON, FRANCE

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 18期

关键词：

D O I：

10.1063/1.109432

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using x-ray photoelectron spectroscopy analysis, it is shown that hydrogen plasma treatment of the gallium arsenide surface induces a modification of the superficial stoichiometry. The resulting surface composition presents a gallium enrichment and is the same whatever the initial composition. The departure from the stoichiometry increases with the plasma power. After the plasma treatment, the absence of arsenic oxidation and an abnormal gallium suboxidation state is observed. Moreover, these new gallium and arsenic oxidation states are stable when the sample is left in the air.

引用

页码：2254 / 2255

页数：2

共 16 条

[1] AN X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY OF CHEMICALLY ETCHED GAAS [J].

ALNOT, P ;

WYCZISK, F ;

FRIEDERICH, A .

SURFACE SCIENCE, 1985, 162 (1-3) :708-716

[2] HYDROGEN PLASMA-ETCHING OF GAAS OXIDE [J].

CHANG, RPH ;

DARACK, S .

APPLIED PHYSICS LETTERS, 1981, 38 (11) :898-900

[3]

CHEVALLIER J, 1988, ANNU REV MATER SCI, V18, P219

[4] NEUTRALIZATION OF DEFECTS AND DOPANTS IN III-V SEMICONDUCTORS [J].

CHEVALLIER, J ;

CLERJAUD, B ;

PAJOT, B .

SEMICONDUCTORS AND SEMIMETALS, 1991, 34 (0C) :447-510

[5] FABRICATION OF A NEW TYPE OF FIELD-EFFECT TRANSISTOR USING NEUTRALIZATION OF SHALLOW DONORS BY ATOMIC-HYDROGEN IN NORMAL-GAAS (SI) [J].

CONSTANT, E ;

CAGLIO, N ;

CHEVALLIER, J ;

PESANT, JC .

ELECTRONICS LETTERS, 1987, 23 (16) :841-843

[6] STUDIES OF THE UV OZONE OXIDATION OF GAAS USING ANGLE-RESOLVED X-RAY PHOTOELECTRON-SPECTROSCOPY [J].

FLINN, BJ ;

MCINTYRE, NS .

SURFACE AND INTERFACE ANALYSIS, 1990, 15 (01) :19-26

[7] PHOTOEMISSION-STUDY OF GAAS PASSIVATION IN MULTIPOLAR PLASMAS OF NITROGEN AND HYDROGEN [J].

FRIEDEL, P ;

LANDESMAN, JP ;

MABON, R .

REVUE DE PHYSIQUE APPLIQUEE, 1987, 22 (08) :797-802

[8] INTERACTIONS BETWEEN H-2 AND N-2 PLASMAS AND A GAAS(100) SURFACE - CHEMICAL AND ELECTRONIC-PROPERTIES [J].

FRIEDEL, P ;

GOURRIER, S .

APPLIED PHYSICS LETTERS, 1983, 42 (06) :509-511

[9] STUDY OF THE INTERACTION OF PLASMAS WITH III-V SEMICONDUCTOR SURFACES, APPLICATION TO PASSIVATION [J].

FRIEDEL, P ;

GOURRIER, S ;

THEETEN, JB ;

ARNOULT, D ;

TAILLEPIED, M ;

ERMAN, M .

SURFACE SCIENCE, 1986, 168 (1-3) :635-644

[10]

KAZMIERSKI C, 1989, ELECTRON LETT, V25, P1933

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