EL2 DEFECT IN GAAS

被引：26

作者：

KAMINSKA, M

机构：

来源：

PHYSICA SCRIPTA | 1987年 / T19B卷

关键词：

D O I：

10.1088/0031-8949/1987/T19B/038

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：551 / 557

页数：7

共 68 条

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WINDSCHEIF, J .

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[2]

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[3]

BATTACHARYA PK, 1980, APPL PHYS LETT, V36, P304

[4] DEEP-LEVEL THERMAL SPECTROSCOPY AND DEEP-LEVEL OPTICAL SPECTROSCOPY - APPLICATION TO STUDY OF LATTICE-RELAXATION [J].

BOIS, D ;

CHANTRE, A .

REVUE DE PHYSIQUE APPLIQUEE, 1980, 15 (03) :631-646

[5]

BOIS D, 1977, J PHYS LETT, V38, P351

[6] IDENTIFICATION OF ASGA ANTISITE DEFECTS IN LIQUID ENCAPSULATED CZOCHRALSKI GAAS [J].

ELLIOTT, K ;

CHEN, RT ;

GREENBAUM, SG ;

WAGNER, RJ .

APPLIED PHYSICS LETTERS, 1984, 44 (09) :907-909

[7] THE OBSERVATION OF HIGH-CONCENTRATIONS OF ARSENIC ANTI-SITE DEFECTS IN ELECTRON-IRRADIATED NORMAL-TYPE GAAS BY X-BAND ELECTRON-PARAMAGNETIC-RES [J].

GOSWAMI, NK ;

NEWMAN, RC ;

WHITEHOUSE, JE .

SOLID STATE COMMUNICATIONS, 1981, 40 (04) :473-477

[8]

HASEGAWA F, 1986, 4TH P C SEM 3 5 MAT, P403

[9] NONRADIATIVE CAPTURE AND RECOMBINATION BY MULTIPHONON EMISSION IN GAAS AND GAP [J].

HENRY, CH ;

LANG, DV .

PHYSICAL REVIEW B, 1977, 15 (02) :989-1016

[10]

HOFMANN DM, 1986, 14TH P INT C DEF SEM, P311

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