EL2 DEFECT IN GAAS

被引：26

作者：

KAMINSKA, M

机构：

来源：

PHYSICA SCRIPTA | 1987年 / T19B卷

关键词：

D O I：

10.1088/0031-8949/1987/T19B/038

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：551 / 557

页数：7

共 68 条

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[13]

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[14] IDENTIFICATION OF THE 0.82-EV ELECTRON TRAP, EL2 IN GAAS, AS AN ISOLATED ANTISITE ARSENIC DEFECT [J].

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[15] INTRACENTER TRANSITIONS IN THE DOMINANT DEEP LEVEL (EL2) IN GAAS [J].

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SKOWRONSKI, M ;

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PARSEY, JM ;

GATOS, HC .

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[16]

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[18]

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[19] STUDY OF 2 DIFFERENT DEEP LEVELS IN UNDOPED LEC SI-GAAS BY PHOTO-LUMINESCENCE SPECTROSCOPY [J].

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[20]

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