PHOTOCONDUCTIVITY STUDIES OF RADIATION-INDUCED DEFECTS IN SILICON

被引：49

作者：

YOUNG, RC

CORELLI, JC

机构：

来源：

PHYSICAL REVIEW B | 1972年 / 5卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.5.1455

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1455 / &

共 20 条

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[8] ANNEALING OF INFRARED DEFECT ABSORPTION BANDS IN 40-MEV ELECTRON-IRRADIATED SILICON [J].

CORELLI, JC ;

OEHLER, G ;

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[9] ELECTRON BOMBARDMENT OF SILICON [J].

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[10] PHOTOCONDUCTIVITY STUDIES OF DEFECTS IN SILICON - DIVACANCY-ASSOCIATED ENERGY LEVELS [J].

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