XPS AND OPTICAL-ABSORPTION STUDIES ON ALPHA-AL2O3 AND MGO SINGLE-CRYSTALS IMPLANTED WITH CR, CU, AND KR IONS

被引：18

作者：

FUTAGAMI, T ^{[1
]}

AOKI, Y ^{[1
]}

YODA, O ^{[1
]}

NAGAI, S ^{[1
]}

机构：

[1] TAKASAKI RADIAT CHEM RES ESTAB,JAERI,TAKASAKI,GUNMA 37012,JAPAN

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1994年 / 88卷 / 03期

关键词：

D O I：

10.1016/0168-583X(94)95322-8

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Charge states of Cu and Cr implanted in alpha-Al2O3 and MgO were investigated by XPS. Implanted ions are trapped at low concentration of the implants as cations (Cu2+ and Cr3+), except for Cu ion implantation in alpha-Al2O3. It was implied that isolated Cr atoms and a portion of dimers are trapped as Cr3+ in alpha-Al2O3, while isolated atoms, dimers, and trimers are trapped as Cr3+ in MgO. Optical absorption measurements showed the presence of lattice defects such as F (or F+) centers, V- centers, and F2 centers in implanted MgO crystals.

引用

页码：261 / 266

页数：6

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