GROWTH INVESTIGATIONS OF 1.3 MU-M GAINASP/INP MQW LASER-DIODES GROWN BY CHEMICAL BEAM EPITAXY

被引：6

作者：

MEIER, HP

BROOM, RF

EPPERLEIN, PW

HAUSSER, S

JAKUBOWICZ, A

WALTER, W

机构：

[1] IBM Research Division, Zurich Research Laboratory

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 127卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(93)90597-P

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report on growth investigations and results of low threshold current density GaInAsP/InP multiple quantum well (MQW) lasers emitting at a wavelength of 1.3 mum. Bulk layers and separate confinement heterostructure MQW laser diodes were grown by chemical beam epitaxy. At optimized growth conditions, broad-area lasers with as low a threshold current density J(th) as 160 A/cm2 and an internal loss of 5 cm-1 were obtained.

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页码：165 / 168

页数：4

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