THERMALLY STIMULATED CURRENT IN FAST-NEUTRON IRRADIATED SEMIINSULATING GAAS - GA ANTISITE RELATED NEW TRAP

被引：12

作者：

KURIYAMA, K

TOMIZAWA, K

KOGA, K

HAYASHI, N

WATANABE, H

IKEDA, Y

MAEKAWA, H

机构：

[1] HOSEI UNIV,ION BEAM TECHNOL RES CTR,KOGANEI,TOKYO 184,JAPAN

[2] ELECTROTECH LAB,TSUKUBA,IBARAKI 319,JAPAN

[3] JAPAN ATOM ENERGY RES INST,TOKAI,IBARAKI 31911,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 14期

关键词：

D O I：

10.1063/1.110616

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The evaluation of the defects in fast neutron irradiated semi-insulating GaAs was studied using thermally stimulated current (TSC) and photoluminescence (PL) methods. A new TSC peak is observed at an annealing stage between 550 and 600-degrees-C. This peak is associated with a Ga(As)-X complex defect, which might include X as the gallium vacancy, according to both the analysis of the activation energy and the annealing behavior of the PL emission. A prominent TSC peak is also observed in as-irradiated samples, showing the creation of an As(Ga)-V(As) complex.

引用

页码：1966 / 1968

页数：3

共 17 条

[1] RADIATIVE TRANSITIONS INDUCED IN GALLIUM-ARSENIDE BY MODEST HEAT-TREATMENT [J].