THERMALLY STIMULATED CURRENT IN NEUTRON-TRANSMUTATION-DOPED SEMIINSULATING GAAS

被引：9

作者：

KURIYAMA, K ^{[1
]}

YOKOYAMA, K ^{[1
]}

SATOH, A ^{[1
]}

机构：

[1] HOSEI UNIV,ION BEAM TECHNOL RES CTR,KOGANEI,TOKYO 184,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 11期

关键词：

D O I：

10.1063/1.105489

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The evaluation of the defects in neutron-transmutation-doped semi-insulating GaAs was studied using a thermally stimulated current (TSC) method. Some native defects were decomposed by the neutron irradiation and one TSC peak was observed in an as-irradiated sample. This peak is associated with a complex defect, which is identified as a As(Ga)-V(As) complex according to the analysis of the activation energy.

引用

页码：1326 / 1328

页数：3

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