共 77 条
- [1] BACHELET GB, 1984, 17TH P INT C PHYS SE, P755
- [3] MODELING THE ELECTRONIC-STRUCTURE OF EL2 [J]. REVUE DE PHYSIQUE APPLIQUEE, 1988, 23 (05): : 817 - 831
- [4] EL2 AND THE ELECTRONIC-STRUCTURE OF THE ASGA-ASI PAIR IN GAAS - THE ROLE OF LATTICE DISTORTION IN THE PROPERTIES OF THE NORMAL STATE [J]. PHYSICAL REVIEW B, 1988, 38 (09): : 6003 - 6014
- [5] ELECTRONIC-STRUCTURE AND BINDING-ENERGY OF THE ASGA-ASI PAIR IN GAAS - EL2 AND THE MOBILITY OF INTERSTITIAL ARSENIC [J]. PHYSICAL REVIEW B, 1987, 35 (12): : 6154 - 6164
- [7] NEED FOR AN ACCEPTOR LEVEL IN THE ASGA-ASI MODEL FOR EL2 [J]. PHYSICAL REVIEW B, 1987, 35 (11): : 5929 - 5932
- [8] BARAFF GA, 1988, DEFECTS ELECTRONIC M, V104, P375
- [10] ARSENIC ANTISITE DEFECTS AND OTHER PARAMAGNETIC CENTERS IN NEUTRON-IRRADIATED AND ANNEALED GAAS [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1986, 19 (20): : 3745 - 3752