INFRARED-ABSORPTION PROPERTIES OF THE EL2 AND THE ISOLATED ASGA DEFECTS IN NEUTRON-TRANSMUTATION-DOPED GAAS - GENERATION OF AN EL2-LIKE DEFECT

被引：26

作者：

MANASREH, MO

FISCHER, DW

机构：

来源：

PHYSICAL REVIEW B | 1989年 / 39卷 / 05期

关键词：

D O I：

10.1103/PhysRevB.39.3239

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

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页码：3239 / 3249

页数：11

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