ATOMIC MODEL FOR THE EL2 DEFECT IN GAAS - COMMENT

[1] ASGA ANTISITE DEFECT IN GAAS [J]. PHYSICAL REVIEW B, 1983, 27 (04): : 2545 - 2547

[2] BISTABILITY AND METASTABILITY OF THE GALLIUM VACANCY IN GAAS - THE ACTUATOR OF EL2 [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (21) : 2340 - 2343

[3] IDENTIFICATION OF THE 0.82-EV ELECTRON TRAP, EL2 IN GAAS, AS AN ISOLATED ANTISITE ARSENIC DEFECT [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (20) : 2204 - 2207

[4] INTRACENTER TRANSITIONS IN THE DOMINANT DEEP LEVEL (EL2) IN GAAS [J]. APPLIED PHYSICS LETTERS, 1983, 43 (03) : 302 - 304

[5] THEORETICAL-STUDY OF NATIVE DEFECTS IN III-V SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1983, 27 (02): : 1101 - 1114

[6] INFRARED-ABSORPTION PROPERTIES OF EL2 IN GAAS [J]. PHYSICAL REVIEW B, 1987, 36 (05): : 2730 - 2734

[7] FOURIER-TRANSFORM INFRARED-ABSORPTION STUDIES OF INTRACENTER TRANSITIONS IN THE EL2 LEVEL IN SEMIINSULATING BULK GAAS GROWN WITH THE LIQUID-ENCAPSULATED CZOCHRALSKI TECHNIQUE [J]. PHYSICAL REVIEW B, 1987, 35 (05): : 2524 - 2527

[8] MANASREH MO, UNPUB

[9] ELECTRON TRAPS IN BULK AND EPITAXIAL GAAS CRYSTALS [J]. ELECTRONICS LETTERS, 1977, 13 (07) : 191 - 193

[10] MARTIN GM, 1986, DEEP CTR SEMICONDUCT, P399

[1] ASGA ANTISITE DEFECT IN GAAS [J]. PHYSICAL REVIEW B, 1983, 27 (04): : 2545 - 2547

[2] BISTABILITY AND METASTABILITY OF THE GALLIUM VACANCY IN GAAS - THE ACTUATOR OF EL2 [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (21) : 2340 - 2343

[3] IDENTIFICATION OF THE 0.82-EV ELECTRON TRAP, EL2 IN GAAS, AS AN ISOLATED ANTISITE ARSENIC DEFECT [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (20) : 2204 - 2207

[4] INTRACENTER TRANSITIONS IN THE DOMINANT DEEP LEVEL (EL2) IN GAAS [J]. APPLIED PHYSICS LETTERS, 1983, 43 (03) : 302 - 304

[5] THEORETICAL-STUDY OF NATIVE DEFECTS IN III-V SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1983, 27 (02): : 1101 - 1114

[6] INFRARED-ABSORPTION PROPERTIES OF EL2 IN GAAS [J]. PHYSICAL REVIEW B, 1987, 36 (05): : 2730 - 2734

[7] FOURIER-TRANSFORM INFRARED-ABSORPTION STUDIES OF INTRACENTER TRANSITIONS IN THE EL2 LEVEL IN SEMIINSULATING BULK GAAS GROWN WITH THE LIQUID-ENCAPSULATED CZOCHRALSKI TECHNIQUE [J]. PHYSICAL REVIEW B, 1987, 35 (05): : 2524 - 2527

[8] MANASREH MO, UNPUB

[9] ELECTRON TRAPS IN BULK AND EPITAXIAL GAAS CRYSTALS [J]. ELECTRONICS LETTERS, 1977, 13 (07) : 191 - 193

[10] MARTIN GM, 1986, DEEP CTR SEMICONDUCT, P399